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  DFM&TCAD培训课程
   班级规模及环境
       为了保证培训效果,增加互动环节,我们坚持小班授课,每期报名人数限3到5人,多余人员安排到下一期进行。
   上课时间和地点
上课地点:【上海】:同济大学(沪西)/新城金郡商务楼(11号线白银路站) 【深圳分部】:电影大厦(地铁一号线大剧院站)/深圳大学成教院 【北京分部】:北京中山/福鑫大楼 【南京分部】:金港大厦(和燕路) 【武汉分部】:佳源大厦(高新二路) 【成都分部】:领馆区1号(中和大道) 【沈阳分部】:沈阳理工大学/六宅臻品 【郑州分部】:郑州大学/锦华大厦 【石家庄分部】:河北科技大学/瑞景大厦
近开课时间(周末班/连续班/晚班)
DFM&TCAD培训课程:2024年12月30日......
   学时
     ◆课时: 共5天,30学时

        ◆外地学员:代理安排食宿(需提前预定)
        ☆注重质量
        ☆边讲边练

        ☆合格学员免费推荐工作

        

        专注高端培训17年,曙海提供的课程得到本行业的广泛认可,学员的能力
        得到大家的认同,受到用人单位的广泛赞誉。

        ★实验设备请点击这儿查看★
   新优惠
       ◆团体报名优惠措施:两人95折优惠,三人或三人以上9折优惠 。注意:在读学生凭学生证,即使一个人也优惠500元。
   质量保障

        1、培训过程中,如有部分内容理解不透或消化不好,可免费在以后培训班中重听;
        2、培训结束后,培训老师留给学员手机和Email,免费提供半年的技术支持,充分保证培训后出效果;
        3、培训合格学员可享受免费推荐就业机会。 。专注高端培训13年,曙海提供的证书得到本行业的广泛认可,学员的能力得到大家的认同,受到用人单位的广泛赞誉。

  DFM&TCAD培训课程
培训方式以讲课和实验穿插进行

课程描述:

Overview
SENTAURUS WORKBENCH: The class covers the basics of this framework tool that allows organization of parameterized TCAD simulations in a single project with many possible splits, or branches.

SENTAURUS PROCESS: Users will learn the specifics of this process simulation tool, in terms of syntax and introduction of various models to simulate fabrication process flows.

SENTAURUS STRUCTURE EDITOR: The class will show you how to create 2D and 3D device structures, import structures from a prior process simulation step, make boundary simplifications and properly mesh structures for any subsequent device simulations.

SENTAURUS DEVICE: The class covers the basics how to simulate the electrical characteristics of devices created with SENTAURUS PROCESS and/or SENTAURUS STRUCTURE EDITOR.

SENTAURUS VISUAL & INSPECT: Users will be taught how to visualize the structures and results generated from the process and device simulations, using these tools.

Objectives
At the end of this workshop the student should be able to:
  • Run parameterized process and device simulations
  • Visualize simulated doping profiles, structure boundaries and materials, I-V curves and internal device characteristics such as carrier densities, current densities, and electric fields.
  • Successfully combine mask layouts and process flows to perform simulations of fabrication processes involving single or multiple semiconductors, insulators and metals.
  • Select proper models for the simulation of fabrication processes and electrical behavior of devices
  • Properly mesh structures for adequate simulations
  • Perform AC analyses of RF parameters

Course Outline

Unit 1
Tool Overview
  • What is TCAD?
  • TCAD Tool Overview
SENTAURUS WORKBENCH
  • Getting Started
  • Running a Project
  • Creating a New Project
  • Building Multiple Experiments
  • Miscellaneous Features
SWB HANDS-ON ? FULL NMOS FLOW SIMULATION
  • Process flow
  • Re-meshing
  • Device simulation
  • Parameter extraction
Process simulation I - SENTAURUS PROCESS
  • Getting Started
  • 1D Process Simulation
  • 2D Process Simulation
  • Interface with ICWB
Unit 2
Process simulation II - SENTAURUS PROCESS
  • Changing Parameters and Models
  • Working with a Custom Calibration File
  • Working with SENTAURUS PROCESS Advanced Calibration
Process simulation III - SENTAURUS PROCESS
  • SProcess under SWB
  • Meshing with MGOALS
  • Other topics/Q&A
Structure editing, Meshing I - SENTAURUS STRUCTURE EDITOR
  • Getting Started
  • Generating 2D Boundaries
  • Generating Doping Profiles
  • Generating Meshes
  • Scripting and Parameterization
Structure editing, Meshing II - SENTAURUS STRUCTURE EDITOR
  • Three-Dimensional Structures
  • Process Emulation Mode
Unit 3
Device simulation I - SENTAURUS DEVICE
  • SENTAURUS DEVICE Basics
  • Quasistationary and Transient simulations
  • Parameter file
Device simulation II - SENTAURUS DEVICE
  • Carrier Transport Models
  • Mixed-mode SENTAURUS DEVICE
  • AC analysis
Device simulation III - SENTAURUS DEVICE
  • Advanced Examples
  • Solving convergence problems in SENTAURUS DEVICE
  • Q&A
Visualization tools - INSPECT & SENTAURUS VISUAL
  • Visualization of X-Y plots and post processing of results
  • Visualization of 2D and 3D structures along with simulation results
  • Interactive mode
  • Scripting - parameter extraction